8541 Diodes, transistors and similar semiconductor devices, photosensitive semiconductor devices, incl. photovoltaic cells whether or not assembled in modules or made up into panels (excl. photovotaic generators), light emitting diodes `LED`, mounted piezoelectric crystals, parts thereof

8541 (01/1988-..) Diodes, transistors and similar semiconductor devices, photosensitive semiconductor devices, incl. photovoltaic cells whether or not assembled in modules or made up into panels (excl. photovotaic generators), light emitting diodes `LED`, mounted piezoelectric crystals, parts thereof 85411000 (01/1999-..) Diodes (excl. photosensitive or light emitting diodes `LED`) 85411010 (01/1988-12/1998) Diodes other than photosensitive or light emitting diodes in wafers not yet cut into chips 85411091 (01/1988-12/1998) Power rectifier diodes (excl. diodes in wafers not yet cut into chips) 85411099 (01/1988-12/1998) Diodes other than photosensitive or light emitting diodes (excl. diodes in wafers not yet cut into chips and power rectifier diodes) 85412100 (01/1999-..) Transistors with a dissipation rate < 1 W (excl. photosensitive transistors) 85412110 (01/1988-12/1998) Transistors other than photosensitive transistors, with a dissipation rate < 1 W, in wafers not yet cut into chips 85412190 (01/1988-12/1998) Transistors other than photosensitive transistors, with a dissipation rate < 1 W (excl. those in wafers not yet cut into chips) 85412900 (01/1999-..) Transistors with a dissipation rate >= 1 W (excl. photosensitive transistors) 85412910 (01/1988-12/1998) Transistors other than photosensitive transistors, with a dissipation rate >= 1 W, in wafers not yet cut into chips 85412920 (01/1995-12/1998) Power MOS field effective transistors with a dissipation rate of 1 W or more 85412930 (01/1995-12/1998) Insulated gate bipolar transistors (IGBTs) with a dissipation rate of 1 W or more 85412980 (01/1995-12/1998) Transistors (excl. photosensitive transistors) with a dissipation rate of 1 W or more (excl. those in wafer form, not yet cut into chips, power MOS field effective transistors and insulated gate bipolar transistors IGBTs)) 85412990 (01/1988-12/1994) Transistors other than photosensitive transistors, with a dissipation rate >= 1 w (excl. those in wafers not yet cut into chips) 85413000 (01/1999-..) Thyristors, diacs and triacs (excl. photosensitive semiconductor devices) 85413010 (01/1988-12/1998) Thyristors, diacs and triacs, in wafers not yet cut into chips (excl. photosensitive semiconductor devices) 85413090 (01/1988-12/1998) Thyristors, diacs and triacs (excl. those in wafers not yet cut into chips and photosensitive semiconductor devices) 85414010 (01/1988-12/1994) Light emitting diodes 85414011 (01/1995-12/1998) Laser diodes 85414019 (01/1995-12/1998) Light-emitting diodes (excl. laser diodes) 85414090 (01/1999-12/2021) Photosensitive semiconductor devices, incl. photovoltaic cells 85414091 (01/1988-12/1998) Solar cells whether or not assembled in modules or made up into panels (excl. photovoltaic generators) 85414093 (01/1988-12/1998) Photodiodes, phototransistors, photothyristors or photocouples (excl. solar cells) 85414099 (01/1988-12/1998) Photosensitive semiconductor devices (excl. photodiodes, phototransistors, photothyristors, photocouples and solar cells) 85414100 (01/2022-..) Light emitting diodes `LED` 85414200 (01/2022-..) Photovoltaic cells not assembled in modules or made up into panels 85414300 (01/2022-..) Photovoltaic cells assembled in modules or made up into panels 85414900 (01/2022-..) Photosensitive semiconductor devices (excl. photovoltaic generators and cells) 85415000 (01/1999-12/2021) Semiconductor devices, n.e.s. 85415010 (01/1988-12/1998) Semiconductor devices n.e.s., in wafers not yet cut into chips 85415090 (01/1988-12/1998) Semiconductor devices n.e.s. 85415100 (01/2022-..) Semiconductor-based transducers (excl. photosensitive) 85415900 (01/2022-..) Semiconductor devices, n.e.s. 85416000 (01/1988-..) Mounted piezoelectric crystals 85419000 (01/1988-..) Parts of diodes, transistors and similar semiconductor devices, photosensitive semiconductor devices, light emitting diodes and mounted piezoelectric crystals, n.e.s.