8541 Diodes, Transistors and Similar Semiconductor Devices, Photosensitive Semiconductor Devices, Incl. Photovoltaic Cells Whether or not Assembled in Modules or Made up Into Panels (Excl. Photovotaic Generators), Light Emitting Diodes, Mounted PiezoelectricCrystals, Parts Thereof

8541 (01/1988-..) Diodes, Transistors and Similar Semiconductor Devices, Photosensitive Semiconductor Devices, Incl. Photovoltaic Cells Whether or not Assembled in Modules or Made up Into Panels (Excl. Photovotaic Generators), Light Emitting Diodes, Mounted PiezoelectricCrystals, Parts Thereof 85411000 (01/1999-..) Diodes (Excl. Photosensitive or Light Emitting Diodes) 85411010 (01/1988-12/1998) Diodes Other Than Photosensitive or Light Emitting Diodes in Wafers not yet cut Into Chips 85411091 (01/1988-12/1998) Power Rectifier Diodes (Excl. Diodes in Wafers not yet cut Into Chips) 85411099 (01/1988-12/1998) Diodes Other Than Photosensitive or Light Emitting Diodes (Excl. Diodes in Wafers not yet cut Into Chips and Power Rectifier Diodes) 85412100 (01/1999-..) Transistors With a Dissipation Rate < 1 w (Excl. Photosensitive Transistors) 85412110 (01/1988-12/1998) Transistors Other Than Photosensitive Transistors, With a Dissipation Rate < 1 w, in Wafers not yet cut Into Chips 85412190 (01/1988-12/1998) Transistors Other Than Photosensitive Transistors, With a Dissipation Rate < 1 w (Excl. Those in Wafers not yet cut Into Chips) 85412900 (01/1999-..) Transistors With a Dissipation Rate >= 1 w (Excl. Photosensitive Transistors) 85412910 (01/1988-12/1998) Transistors Other Than Photosensitive Transistors, With a Dissipation Rate >= 1 w, in Wafers not yet cut Into Chips 85412920 (01/1995-12/1998) Power mos Field Effective Transistors With a Dissipation Rate of 1 w or More 85412930 (01/1995-12/1998) Insulated Gate Bipolar Transistors (Igbts) With a Dissipation Rate of 1 w or More 85412980 (01/1995-12/1998) Transistors (Excl. Photosensitive Transistors) With a Dissipation Rate of 1 w or More (Excl. Those in Wafer Form, not yet cut Into Chips, Power mos Field Effective Transistors and Insulated Gate Bipolar Transistors Igbts)) 85412990 (01/1988-12/1994) Transistors Other Than Photosensitive Transistors, With a Dissipation Rate >= 1 w (Excl. Those in Wafers not yet cut Into Chips) 85413000 (01/1999-..) Thyristors, Diacs and Triacs (Excl. Photosensitive Semiconductor Devices) 85413010 (01/1988-12/1998) Thyristors, Diacs and Triacs, in Wafers not yet cut Into Chips (Excl. Photosensitive Semiconductor Devices) 85413090 (01/1988-12/1998) Thyristors, Diacs and Triacs (Excl. Those in Wafers not yet cut Into Chips and Photosensitive Semiconductor Devices) 85414010 (01/1999-..) Light-emitting Diodes, Incl. Laser Diodes 85414011 (01/1995-12/1998) Laser Diodes 85414019 (01/1995-12/1998) Light-emitting Diodes (Excl. Laser Diodes) 85414090 (01/1999-..) Photosensitive Semiconductor Devices, Incl. Photovoltaic Cells 85414091 (01/1988-12/1998) Solar Cells Whether or not Assembled in Modules or Made up Into Panels (Excl. Photovoltaic Generators) 85414093 (01/1988-12/1998) Photodiodes, Phototransistors, Photothyristors or Photocouples (Excl. Solar Cells) 85414099 (01/1988-12/1998) Photosensitive Semiconductor Devices (Excl. Photodiodes, Phototransistors, Photothyristors, Photocouples and Solar Cells) 85415000 (01/1999-..) Semiconductor Devices, N.e.s. 85415010 (01/1988-12/1998) Semiconductor Devices N.e.s., in Wafers not yet cut Into Chips 85415090 (01/1988-12/1998) Semiconductor Devices N.e.s. 85416000 (01/1988-..) Mounted Piezoelectric Crystals 85419000 (01/1988-..) Parts of Diodes, Transistors and Similar Semiconductor Devices, Photosensitive Semiconductor Devices, Light Emitting Diodes and Mounted Piezoelectric Crystals, N.e.s.